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Shop Single Crystal CVD Graphene on Cu-Sapphire Wafer (I)
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single-crystalline CVD graphene wafer
single-crystalline CVD graphene wafer
single-crystalline CVD graphene wafer

Single Crystal CVD Graphene on Cu-Sapphire Wafer (I)

€2,249.00

Single crystalline CVD graphene film synthesized on single crystalline copper film. The single crystalline copper film is deposited on a sapphire wafer.

Size: 4-inch wafer

Roughness: < 1 nanometer

Copper film coverage: >90%

Graphene film coverage: >90%

Note: Grade I single-crystalline CVD graphene on Cu-Sapphire wafers is primarily for industrial-grade applications. Dense twinning of copper in low-density and high uniform coverage of graphene within the inscribed rectangular region of the wafer is expected. At the extreme edges of the wafer i.e. outside the inscribed rectangular region of the wafer, uncovered graphene region, dense twinning, and volatilization occurrences may be present.

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Single crystalline CVD graphene film synthesized on single crystalline copper film. The single crystalline copper film is deposited on a sapphire wafer.

Size: 4-inch wafer

Roughness: < 1 nanometer

Copper film coverage: >90%

Graphene film coverage: >90%

Note: Grade I single-crystalline CVD graphene on Cu-Sapphire wafers is primarily for industrial-grade applications. Dense twinning of copper in low-density and high uniform coverage of graphene within the inscribed rectangular region of the wafer is expected. At the extreme edges of the wafer i.e. outside the inscribed rectangular region of the wafer, uncovered graphene region, dense twinning, and volatilization occurrences may be present.

Access Datasheet

Single crystalline CVD graphene film synthesized on single crystalline copper film. The single crystalline copper film is deposited on a sapphire wafer.

Size: 4-inch wafer

Roughness: < 1 nanometer

Copper film coverage: >90%

Graphene film coverage: >90%

Note: Grade I single-crystalline CVD graphene on Cu-Sapphire wafers is primarily for industrial-grade applications. Dense twinning of copper in low-density and high uniform coverage of graphene within the inscribed rectangular region of the wafer is expected. At the extreme edges of the wafer i.e. outside the inscribed rectangular region of the wafer, uncovered graphene region, dense twinning, and volatilization occurrences may be present.

Access Datasheet

Location

Schaffhausen, Switzerland.

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